Vector Analysis of Electrical Networks for Temperature Measurement of MOS Power Transistors

eng Artykuł w języku angielskim DOI: 10.14313/PAR_242/83

wyślij Błażej Torzyk , Bogusław Więcek Lodz University of Technology, Institute of Electronics, Al. Politechniki 10, B-9 building, 93-590 Lodz, Poland

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Abstract

The article presents the concept of using VNA (Vector Network Analyzer) to measure the temperature of the MOS transistor junction. The method assumes that the scattering parameters of the network consisting of the transistor depend on the temperature. The tests confirmed the influence of temperature on the S11 parameter and the input network capacity during ambient temperature changes in the range of 35–70 °C. Measurements were made for the gate-source (G-S) input of the system. The measurements were carried-out with the transistor in the ON/OFF states. In order to validate the measurements, the temperature of the tested element was recorded with the MWIR Cedip-Titanium thermal imaging camera.

Keywords

electrical impedance, IR camera measurement, MOS transistor, S-parameter, Vector Network Analyzer

Zastosowanie analizy wektorowej sieci elektrycznych do pomiaru temperatury tranzystorów MOS

Streszczenie

W artykule przedstawiono koncepcję wykorzystania wektorowego analizatora sieci VNA (ang. Vector Network Analyzer) do pomiaru temperatury złącza tranzystora MOS. Metoda zakłada, że parametry rozpraszania sieci elektrycznych wewnętrznych struktur tranzystora zależą od temperatury. Badania potwierdziły wpływ temperatury na parametr S11 oraz na pojemność wejściową przy zmianie wartości temperatury otoczenia w zakresie 35–70 °C. Pomiary wykonano dla wejścia bramka-źródło (G-S) układu. Pomiary przeprowadzono z tranzystorem w stanach ON/OFF. W celu walidacji pomiarów, temperaturę badanego elementu rejestrowano kamerą termowizyjną MWIR Cedip-Titanium.

Słowa kluczowe

impedancja elektryczna, parametry rozpraszania, parametry S, pomiary termowizyjne, temperatura, tranzystor MOS, VNA, Wektorowy Analizator Sieci

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